Transistors IC SMD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage (max. 45 V). 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low noise. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA mW Total power dissipation Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW71,BCW72 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current BCW71 DC current gain Testconditons Min BCW71 IE = 0; VCB = 20 V; Tj = 100 10 ìA IC = 0; VEB = 5 V 100 ìA hFE IC = 10 ìA; VCE = 5 V 90 150 hFE IC = 2 mA; VCE = 5 V 110 120 200 450 IC = 10 mA; IB = 0.5 mA 120 IC = 50 mA; IB = 2.5 mA 210 mV IC = 10 mA; IB = 0.5 mA 750 mV IC = 50 mA; IB = 2.5 mA Base to emitter voltage VBE IC = 2 mA; VCE = 5 V Collector capacitance CC IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz NF IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz hFE Classification 2 TYPE BCW71 BCW72 Marking K1 K2 www.kexin.com.cn nA IEBO VBE(sat) Noise figure 100 ICBO VCE(sat) Base to emitter saturation voltage Unit IE = 0; VCB = 20 V BCW72 Collector-emitter saturation voltage Max ICBO BCW72 DC current gain Typ 250 850 550 mV mV 700 2.5 mV pF 100 MHz 10 dB