KEXIN BCX19

Transistors
IC
SMD Type
NPN General Purpose Transistors
BCX19
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low voltage (max. 45 V).
1
0.55
High current (max. 500 mA).
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICM
1
A
Peak base current
IBM
200
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
ICBO
IE = 0; VCB = 20 V
ICBO
IE = 0; VCB = 20 V; Tj = 150
Emitter cutoff current
IEBO
IC = 0; VEB = 5 V
IC = 100mA; VCE = 1 V
100
DC current gain *
hFE
IC = 300 mA;VCE = 1 V
70
IC = 500 mA;VCE = 1 V
40
Collector cutoff current
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA; IB = 50 mA
Base to emitter voltage *
VBE
IC = 500 mA; VCE = 1 V
Collector capacitance
CC
IE = ie = 0; VCB = 10 V; f = 1 MHz
Transition frequency
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
* Pulse test: tp
300 ìs; d
Typ
Max
Unit
100
nA
5
ìA
100
nA
600
620
1.2
5
100
mV
V
pF
MHz
0.02.
Marking
Marking
U1
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