Transistors SMD Type Silicon NPN epitaxial planer type BF620; BF622 Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage BF620 VCBO Rating Unit 300 V (open emitte) BF622 250 V collector-emitter voltage BF620 300 V (open-base ) BF622 250 V emitter-base voltage (open collector) VCEO VEBO 5 V collector current (DC) IC 50 mA peak collector current ICM 100 mA peak base current total power dissipation Tamb 25 * storage temperature junction temperature IBM 50 mA Ptot 1.25 W Tstg -65 to150 Tj 150 operating ambient temperature Tamb -65 to150 thermal resistance from junction to ambient * Rth j-a 100 K/W thermal resistance from junction to soldering point Rth j-s 20 K/W * Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 Transistors SMD Type BF620; BF622 Electrical Characteristics Ta = 25 Parameter Symbol collector cut-off current V(BR)CBO Max Unit IE = 0; VCB = 200 V Testconditons 10 nA IE = 0; VCB = 200 V; Tj = 150 10 mA 50 nA IC = 30 mA; IB = 5 mA 600 mV IC = ic = 0; VCE = 30 V; f = 1 MHz 1.6 pF emitter cut-off current IEBO IC = 0; VEB = 5 V DC current gain hFE IC = 25 mA; VCE = 20 V collector-emitter saturation voltage VCEsat feedback capacitance Cre transition frequency fT Marking 2 unless otherwise specified. Type Number BF620 BF622 Marking DC DA www.kexin.com.cn IC = 10 mA; VCE = 10 V; f = 100 MHz Min Typ 50 60 MHz