Transistors SMD Type NPN Silicon Transistor CZT5551 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V IC 600 mA W Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PD 2 TJ,Tstg -65 to 150 ÈJA 62.5 /W Electrical Characteristics Ta = 25 Symbol Testconditons Min Max Unit ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100 50 mA IEBO VEB=4.0V 50 nA BVCBO IC=100ìA 180 BVCEO IC=1.0mA 160 V BVEBO IE=10ìA 6.0 V V VCE(SAT) IC=10mA, IB=1.0mA 0.15 V VCE(SAT) IC=50mA, IB=5.0mA 0.20 V VBE(SAT) IC=10mA, IB=1.0mA 1.00 V VBE(SAT) IC=50mA, IB=5.0mA 1.00 V hFE fT VCE=5.0V, IC=1.0mA 80 VCE=5.0V, IC=10mA 80 VCE=5.0V, IC=50mA 30 VCE=10V, IC=10mA, f=100MHz 100 250 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 20 pF hfe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=200ìA, RS=10 Ù,f=10Hz to 15.7kHz 50 200 8.0 dB www.kexin.com.cn 1