KEXIN FCX491

Transistors
SMD Type
Medium Power Transistor
FCX491
SOT-89
Unit: mm
+0.1
4.50-0.1
Features
+0.1
1.50-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
1 Amp continuous current.
+0.1
4.00-0.1
60 Volt VCEO.
Ptot= 1 Watt.
+0.1
0.44-0.1
+0.1
3.00-0.1
+0.1
0.40-0.1
+0.1
2.60-0.1
+0.1
0.80-0.1
+0.1
0.53-0.1
+0.1
0.48-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5
V
Peak pulse current
IC
1
A
Continuous collector current
ICM
2
A
Ptot
1
W
Tj,Tstg
-65 to +150
Power dissipation
Operating and storage temperature range
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1
Transistors
SMD Type
FCX491
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Breakdown Voltages
V(BR)CBO IC=100ìA
80
V
Breakdown Voltages
VCEO(sus) IC=10mA
60
V
Breakdown Voltages
V(BR)EBO IE=100ìA
5
V
ICBO
Collector-base cut-off current
Emitter-base current
VCB=60V
100
nA
ICES
VCE=60V
100
nA
IEBO
VEB=4V
100
nA
IC=500mA, IB=50mA
IC=1A, IB=100mA
0.25
0.5
V
1.1
V
1.0
V
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
VBE(sat) IC=1A, IB=100mA
Base-emitter ON voltage *
VBE(on) IC=1A, VCE=5V
Static Forward Current Transfer Ratio *
Transitional frequency
Cobo
* Pulse test: tp = 300 ìs; d
Marking
Marking
hFE
fT
Output capacitance
2
Testconditons
N1
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0.02.
IC=1mA, VCE=5V
100
IC=500mA, VCE=5V*
100
IC=1A, VCE=5V*
80
IC=2A, VCE=5V*
30
IC=50mA, VCE=10V f=100MHz
150
VCB=10V, f=1MHz
300
MHz
10
pF