Transistors SMD Type Switching Transistor FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE(sat) 50mÙ at 3A. +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 Extremely low equivalent on-resistance. +0.1 0.44-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1 12A peak pulse current. +0.1 4.00-0.1 2W power dissipation. 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Peak pulse current IC 3 A Continuous collector current ICM 12 A IB 500 mA Ptot 1 W Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX617 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 15 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 15 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector Cut-Off Current ICBO VCB=10V 0.3 100 nA Collector Emitter Cut-Off Current ICES VCE=10V 0.3 100 nA Emitter Cut-Off Current IEBO VEB=4V 0.3 100 nA Collector-emitter saturation voltage * IC=0.1A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=3A, IB=50mA IC=4A, IB=50mA IC=5A, IB=50mA 8 70 150 --------- 14 100 230 300 400 mV Base-emitter saturation voltage * VBE(sat) IC=3A, IB=50mA 0.89 1.0 V VBE(on) IC=3A, VCE=2V 0.82 1.0 V Base-emitter ON voltage * Static Forward Current Transfer Ratio* Transitional frequency hFE fT IC=10mA, VCE=2V IC=200mA,VCE=2V IC=3A,VCE=2V IC=5A,VCE=2V IC=12A,VCE=2V 200 300 200 150 ----- 415 450 320 240 80 IC=50mA, VCE=10V f=50MHz 80 120 MHz Output capacitance Cobo VCB=10V, f=1MHz 30 Turn-on time t(on) IC=3A, VCC=10V 120 ns Turn-off time t(off) IB1=IB2=50mA 160 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons 617 www.kexin.com.cn 0.02. 40 pF