Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Continuous collector current ICM 6 A Peak pulse current IC 2 A Power dissipation Ptot 1 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX690B Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 45 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 45 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCB=9V 0.1 ìA VEB=4V 0.1 ìA IC=0.1A, IB=0.5mA IC=1A, IB=5mA 80 300 mV Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=1A, IB=10mA 1.1 V Base-emitter ON voltage * VBE(on) IC=1A, VCE=2V 1.0 V Static Forward Current Transfer Ratio* Transitional frequency hFE fT Input capacitance Cibo Output capacitance IC=100mA,VCE=2V IC=1A,VCE=2V IC=2A,VCE=2V 500 400 150 IC=50mA, VCE=5V, f=50MHz 150 MHz VEB=0.5V, f=1MHz 200 pF Cobo VCB=10V, f=1MHz 16 pF Turn-on time t(on) IC=500mA, VCC=10V Turn-off time t(off) * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons 690 www.kexin.com.cn 0.02. IB1=IB2=50mA 33 ns 1300 ns