Transistors IC SMD Type Switching Transistors FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors IC SMD Type FMMT4123 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10ìA 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA 30 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA 5 V Collector cutoff current ICBO Emitter cut-off current IEBO VCE=20V 50 nA VEB=3V 50 nA Collector-emitter saturation voltage * VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage * VBE(sat) IC=50mA, IB=5mA 0.95 V DC current gain * hFE Current-gain-bandwidth product fT IC=2mA, VCE=1V 50 IC=10mA, VCE=20V f=100MHz 250 150 MHz VCB=5V, IE=0, f=140KHz 4 pF Cibo VBE=0.5V, IC=0, f=140KHz 8 pF Noise figure NF VCE=5V IC=200ìA,Rg=2kÙ f=30Hz to 15KHz at-3dB points 6 dB Small signal current transfer hfe IC=2mA, VCE=1V, f=1KHz Delay time td 24 ns Output capacitance Cobo Input capacitance Rise time tr Storage time ts Fall time tf * Pulse test: tp 300ìs; d Marking Marking 2 Testconditons ZB www.kexin.com.cn 0.02. VCC=3V, IC=10mA,IB1=1mA VBE(off)=0.5V VCC=3V, IC=10mA IB1= IB2=1mA 50 200 13 ns 125 ns 11 ns