Transistors IC SMD Type Medium Power Transistor FMMT549 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Peak collector current ICM -2 A Collector current IC -1 A Base current IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors IC SMD Type FMMT549 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -35 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-30V -0.1 ìA Emitter cut-off current IEBO VEB=-4V -0.1 ìA -0.25 -0.5 -0.50 -0.75 V IC=-1A,IB=-100mA IC=-2A,IB=-200mA Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=-1A,IB=-100mA -0.9 -1.25 V Base-emitter voltage * VBE(ON) IC=-1A,VCE=-2V -0.85 -1 V hFE DC current gain * Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp 300 ìs; d Marking Marking 2 Testconditons 549 www.kexin.com.cn 0.02. fT IC=-50mA, VCE=-2V 70 200 IC=-1A, VCE=-2V 80 130 I =-2A, V =-2V 40 80 IC=-500mA,VCE=-2V 100 160 IC=-100mA,VCE=-5V,f=100MHz 100 300 MHz Cobo VCB=-10V,f=1MHz 25 pF ton VCB=-10V, f=1MHz 50 ns toff IC=-500mA,VCC=-10V,IB1=IB2=-50mA 300 ns