KEXIN FZT688B

Transistors
SMD Type
NPN Silicon Planar Medium
Power High Gain Transistor
FZT688B
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A.
+0.1
3.00-0.1
Gain of 400 at IC=3 Amps and very low saturation voltage.
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
12
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Peak pulse current
IC
4
A
Continuous collector current
ICM
10
A
Ptot
2
W
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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1
Transistors
SMD Type
FZT688B
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Breakdown Voltages
V(BR)CBO IC=100ìA
12
V
Breakdown Voltages
V(BR)CEO IC=10mA
12
V
Breakdown Voltages
V(BR)EBO IE=100ìA
5
V
Collector Cut-Off Current
ICBO
VCB=10V
0.1
ìA
Emitter Cut-Off Current
IEBO
VEB=4V
0.1
ìA
Collector-emitter saturation voltage *
IC=0.1A, IB=1mA
IC=0.1A, IB=0.5mA
VCE(sat) IC=1A, IB=50mA
IC=3A, IB=20mA
IC=4A, IB=50mA
0.04
0.06
0.18
0.35
0.40
V
Base-emitter saturation voltage *
VBE(sat) IC=3A, IB=20mA
1.1
V
Base-Emitter Turn-On Voltage *
VBE(on) IC=3A, VCE=2V
1.0
V
Static Forward Current Transfer Ratio*
Transitional frequency
hFE
fT
IC=0.1A, VCE=2V
IC=3A, VCE=2V
IC=10A, VCE=2V
500
400
100
IC=50mA, VCE=5V f=50MHz
150
MHz
Input capacitance
Cibo
VEB=0.5V, f=1MHz
200
pF
Output capacitance
Cobo
VCB=10V, f=1MHz
40
pF
Turn-on time
t(on)
IC=500mA, VCC=10V
40
ns
Turn-off time
t(off)
IB1=50A,IB2=50mA
500
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
2
Testconditons
FZT688B
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