Transistors SMD Type High Performance Transistor FZT751 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 60 Volt VCEO. +0.1 3.00-0.1 3 Amp continuous current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage. 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -6 A Peak pulse current IC -3 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT751 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -80 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 Collector Cut-Off Current ICBO VCB=-60V VCB=-60V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-4V IC=-1A, IB=-100mA IC=-3A, IB=-300mA V -0.1 -10 ìA -0.1 ìA -0.15 -0.45 -0.3 -0.6 V Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-100mA -0.9 -1.25 V Base-emitter ON voltage * VBE(on) IC=-1A, VCE=-2V -0.8 -1.0 V Collector Cut-Off Current Transfer Ratio * Transitional frequency hFE fT IC=-50mA, VCE =-2V* 70 200 IC=-500mA, VCE =-2V* 100 200 IC=-1A, VCE =-2V* 80 170 IC=-2A, VCE =-2V* 40 150 IC=-100mA, VCE=-5V, f=100MHz 100 140 300 MHz Output capacitance Cobo VCB=-10V, f=1MHz Turn-on time t(on) IC=-500mA, VCC=-10V 40 ns t(off) IB1=IB2=-50mA 450 ns Turn-off time * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT751 www.kexin.com.cn 30 pF