Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE(sat) 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current 4 Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 6 A Power Dissipation at Tamb=25 Ptot 3 W Tj:Tstg -55 to +150 Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT853 Electrical Characteristics Ta = 25 Parameter unless otherwise stated Symbol Testconditons Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA 150 220 V Collector-Emitter Breakdown Voltage V(BR)CER IC=1ìA, RB 1KÙ 150 220 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA* 60 85 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ìA 6 8 Collector Cut-Off Current Collector Cut-Off Current R 1KÙ Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO ICER IEBO VCE(sat) V VCB=120V 50 nA VCB=120V,Tamb=100 1 ìA VCB=120V 50 nA VCB=120V,Tamb=100 1 ìA VEB=6V 10 nA IC=0.1A, IB=50mA* 50 mV IC=1A, IB=50mA* 100 mV IC=2A, IB=50mA* 170 mV IC=6A, IB=300mA* 375 mV Base-Emitter Saturation Voltage VBE(sat) IC=6A, IB=300mA* 1200 mV Base-Emitter Turn-On Voltage VBE(on) IC=6A, VCE=1V* 1150 V Static Forward Current Transfer Ratio hFE IC=10mA, VCE=1V 100 200 IC=2A, VCE=1V* 100 200 IC=5A, VCE=1V* 75 120 IC=10A, VCE=1V* 25 50 130 MHz Cobo VCB=10V, f=1MHz 45 pF ton IC=1A, IB1=100mA 45 ns toff IB2=100mA, VCC=10V 1100 ns fT Output Capacitance *Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% www.kexin.com.cn 300 IC=100mA, VCE=10V,f=50MHz Transition Frequency Switching Times 2 Min