Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZTA42 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 Suitable for video output stages in TV sets +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 and switch mode power supplies High breakdown voltage 1 Base 1 2 Collector 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V IB 100 mA Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25 Ptot 2 W Tj:Tstg -55 to +150 Base Current Operating and Storage Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA, IE=0 300 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0* 300 V Emitter-Base Breakdown Voltage 5 V(BR)EBO IE=100ìA, IC=0 Collector Cut-Off Current ICBO VCB=200V, IE=0 0.1 ìA Emitter Cut-Off Current IEBO VEB=5V, IC=0 0.1 ìA IC=20mA, IB=2mA 0.5 V 0.9 V Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo IC=20mA, IB=2mA IC=1mA, VCE=10V* 25 IC=10mA, VCE=10V* 40 IC=30mA, VCE=10V* 40 IC=10mA, VCE=20V,f=20MHz 50 VCB=20V, f=1MHz * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle V MHz 6 pF 2% www.kexin.com.cn 1