Diodes SMD Type Silicon Schottky Barrier Diode HSB276AS Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VRRM 5 V R e v e rs e v o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t IO 30 mA R e p e titiv e p e a k re v e rs e v o lta g e J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Forward voltage VF IF =1.0 mA 3 Reverse current IR V R =0.5 V Forward current IF V F =0.5 V C V R = 0.5 V, f = 1 MHz 0.90 pF ÄC V R = 0.5V, f = 1 MHz 0.10 pF Capacitance Capacitance deviation C=200pF, R= 0 ESD-Capability (Note 1) Both forward and Typ Max V 50 35 30 Unit A mA V reverse direction 1 pulse. Note 100 1. Failure criterion ; IR A at V R =0.5 V Marking Marking E8 www.kexin.com.cn 1