Diodes SMD Type High-speed double diode BAV74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High switching speed: max.4 ns 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 50 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage: max. 60 V 0-0.1 +0.1 0.38-0.1 Repetitive peak forward current: max. 450 mA 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol Conditions VRRM VR IF Total power dissipation Ptot Storage temperature Tstg Junction temperature Unit 60 V 50 V 215 double diode loaded; Note 1 125 IFRM IFSM Max single diode loaded; Note 1 450 square wave;Tj = 25 Non-repetitive peak forward current Min mA prior to surge; s 4 t = 1 ms 1 t=1 mA t=1s 0.5 Tamb = 25 ; Note 1 250 -65 A mW +150 Tj 150 thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type BAV74 Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Sym bol Conditions Max Unit IF = 1 m A 715 mV VF I F = 10 m A 855 mV I F = 100 m A 1.0 V V R = 25 V 30 nA V R = 50 V 0.1 A V R = 25 V; T j = 150 30 A V R = 50 V; T j = 150 100 A 1.5 pF 4 ns 1.75 V IR Diode capacitance Cd Reverse recovery tim e t rr f = 1 MHz; V R = 1 V; when switched from I F =10m A to I R = 10 m A; R L = 100 Reverse recovery tim e Marking Marking 2 JAp www.kexin.com.cn V fr ; m easured at I R = 1 m A; when switched from I F =10 m A; t r = 2 0 ns;