KEXIN KC846S

Transistors
SMD Type
NPN Silicon AF Transistors Array
KC846S(BC846S)
SOT-363
1.3
Unit: mm
+0.1
-0.1
+0.15
2.3-0.15
Features
+0.1
1.25-0.1
0.525
0.65
0.36
For AF input stage and driver applications
+0.1
0.3-0.1
+0.1
2.1-0.1
+0.05
0.1-0.02
+0.05
0.95-0.05
Low collector-emitter saturation voltage.
0.1max
High current gain.
1 E1
4 E2
2 B1
5 B2
3 C2
6 C1
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
80
V
Collector-emitter voltage
VCEO
65
V
Emitter-base voltage
VEBO
6
V
Collector current (DC)
IC
100
mA
Peak collector current
ICM
200
mA
mW
power dissipation
PD
250
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
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1
Diodes
SMD Type
KC846S(BC846S)
Electrical Characteristics Ta = 25
Parameter
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = 10
A, IE = 0
80
V
Collector-emitter breakdown voltage
VCEO
IC = 10 mA, IB = 0
65
V
Emitter-base breakdown voltage
VEBO
IE = 10
6
Collector cutoff current
ICBO
DC current gain *
hFE
Collector-emitter saturation voltage*
VCE(sat)
Base-emitter saturation voltage*
VBE(sat)
Base-emitter voltage*
VBE(ON)
A, IC = 0
V
VCB = 30 V, IE = 0
15
nA
VCB = 30 V, IE = 0 , TA = 150
5
A
IC = 10
250
A, VCE = 5 V
IC = 2 mA, VCE = 5 V
200
290
450
IC = 10 mA, IB = 0.5 mA
90
250
IC = 100 mA, IB = 5 mA
200
650
IC = 10 mA, IB = 0.5 mA
700
IC = 100 mA, IB = 5 mA
900
IC = 2 mA, VCE = 5 V
580
660
IC = 10 mA, VCE = 5 V
mV
mV
700
770
mV
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
2
pF
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz
10
pF
Noise figure
F
IC = 200 A, VCE = 5 V, RS = 2 k
kHz, f = 200 Hz
Transition frequency
fT
IC = 20 mA, VCE = 5 V, f = 100 MHz
* Pulse test: t < 300 s; D < 2%
Marking
Marking
2
Symbol
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1D
,f = 1
10
250
dB
MHz