Transistors SMD Type NPN General Purpose Transistors KC847T(BC847T) SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 100 mA Peak collector current ICM 200 mA power dissipation PD 150 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol ICBO collector cut-off current emitter cut-off current IEBO Max Unit IE = 0; VCB = 30 V Testconditons Min 15 nA IE = 0; VCB = 30 V; Tj = 150 5 A IC = 0; VEB = 5 V 100 KC847AT DC current gain KC847BT hFE IC = 2 mA; VCE = 5 V KC847CT collector-emitter saturation voltage VCEsat Typ 110 220 200 450 420 800 nA IC = 10 mA; IB = 0.5 mA 200 mV IC = 100 mA; IB = 5 mA; * 400 mV IC = 2 mA; VCE = 5 V 700 mV IC = 10 mA; VCE = 5 V 770 mV Cc IE = ie = 0; VCB = 10 V; f = 1 MHz 1.5 pF Ce IC = ic = 0; VEB = 500 mV; f = 1 MHz noise figure F IC = 200 A; VCE = 5 V; RS = 2 k kHz; B = 200 Hz transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz base-emitter voltage VBE collector capacitance emitter capacitance * Pulse test: tp 300 ms; 580 11 ;f = 1 pF 10 100 dB MHz 0.02. Marking NO. KC847AT KC847BT KC847CT Marking 1E 1F 1G www.kexin.com.cn 1