KEXIN KDR8702H

Transistors
IC
SMD Type
20V N & P-Channel PowerTrench MOSFET
KDR8702H
Features
N-Ch
RDS(ON) = 54m
@ VGS = 2.5 V
3.6 A, 20 V
RDS(ON) = 38m
@ VGS =4.5V
P-Ch
-2.6 A, -20 V
RDS(ON) = 110 m
RDS(ON) = 80 m
@ VGS =- 2.5 V
@ VGS =-4.5V
Fast switching speed
High performance trench technology for extremely low RDS(ON)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
Drain to Source Voltage
VDSS
20
-20
V
Gate to Source Voltage
VGS
8
V
-2.6
A
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Operating and Storage Temperature
12
3.6
15
-10
PD
0.8
TJ, TSTG
-55 to 150
Unit
A
W
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
146
/W
Thermal Resistance Junction to Ambient (Note 1b)
R
JA
76
/W
Thermal Resistance Junction to Case (Note 1)
R
JC
40
/W
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Transistors
IC
SMD Type
KDR8702H
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
VGS(th)
A, Referenced to 25
Min
N-Ch
20
P-Ch
-20
36
P-Ch
-15
N-Ch
1
P-Ch
-1
VGS =
12 V, VDS = 0 V
N-Ch
100
VGS =
8 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
VDS = VGS, ID = -250
A
A, Referenced to 25
A, Referenced to 25
Static Drain-Source On-Resistance
RDS(on)
VGS = 2.5 V, ID = 3.1 A
N-Ch
0.6
0.8
1.5
P-Ch
-0.4
-0.7
-1.6
N-Ch
-2
P-Ch
2.5
N-Ch
Forward Transconductance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
2
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ID(on)
gFS
RG
Ciss
td(on)
tr
td(off)
tf
54
41
58
80
85
110
83
108
VGS = 4.5 V, VDS = 5V
N-Ch
10
VGS = -4.5 V, VDS = -5V
P-Ch
-10
VDS = VGS, ID = 250 A
N-Ch
15
VDS = VGS, ID = -250 A
P-Ch
9
N-Ch
1
VGS = 15 mV, f = 1.0 MHz
nA
V
m
A
P-Ch
4.8
N-Channel
N-Ch
650
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
P-Ch
607
N-Ch
170
P-Channel
P-Ch
165
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
80
P-Ch
60
Coss
Crss
38
42
66
VGS = -4.5 V, ID =-2.6 A,TJ = 125
On-State Drain Current
31
VGS = -4.5 V, ID =-2.6 A
P-Ch
A
mV/
VGS = 4.5 V, ID =3.6 A,TJ = 125
VGS = -2.5 V, ID =-2.2 A
Unit
mV/
VDS = -16 V, VGS = 0 V
ID = -250
RDS(on)
Max
V
N-Ch
VGS = 4.5 V, ID =3.6A
Static Drain-Source On-Resistance
Typ
VDS = 16V, VGS = 0 V
ID = 250
Gate Threshold Voltage Temperature
Coefficient
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Testconditons
Symbol
S
pF
pF
pF
N-Channel
N-Ch
8
16
VDD = 10 V, ID = 1 A,
P-Ch
12
22
VGS = 4.5 V, RGEN = 6
N-Ch
9
18
P-Ch
11
20
P-Channel
N-Ch
16
29
VDD = -10 V, ID = -1 A,
P-Ch
26
42
VGS = -4.5 V, RGEN = 6
N-Ch
7
14
P-Ch
8
16
ns
ns
ns
ns
Transistors
IC
SMD Type
KDR8702H
Electrical Characteristics Ta = 25
Parameter
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
Maximum Continuous Drain-Source
Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
Diode Reverse Recovery Time
Testconditons
Symbol
trr
Typ
Max
N-Channel
N-Ch
7
10
VDS =10V,ID=3.6A,VGS=4.5V
P-Ch
6
8
(Note 2)
N-Ch
1.3
P-Channel
P-Ch
1.2
VDS=-10V,ID=-2.6A,VGS=-4.5V
N-Ch
2.2
(Note 2)
P-Ch
1.6
Qrr
0.7
P-Ch
-0.7
0.7
1.2
P-Ch
-0.7
-1.2
N-Channel
N-Ch
16
P-Ch
22
P-Channel
Diode Reverse Recovery Charge
N-Ch
N-Ch
Irm
IF =-2.6A,diF/dt = 100 A/
s
N-Ch
0.6
P-Ch
0.7
N-Ch
5
P-Ch
8
nC
nC
VGS = 0 V, IS = -0.7A (Not 2)
s
Unit
nC
VGS = 0 V, IS = 0.7A (Not 2)
IF =3.6A,diF/dt = 100 A/
Maximum Reverse Recovery Current
Min
A
V
nS
A
nC
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