IC IC SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m RDS(ON) = 530m @ VGS = 10 V @ VGS = 6 V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 100 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Dual Operation PD Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) A 6 A 2 1.6 PD 1 TJ, TSTG -55 to 175 Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature 1.3 W 0.9 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W www.kexin.com.cn 1 IC IC SMD Type KDS3601 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Symbol W DSS IAR BVDSS Breakdown Voltage Temperature Coefficient Testconditons Max Unit Single Pulse,VDD=50V,ID=1.3A(Not 2) 26 mJ ( Not 2) 1.3 A VGS = 0 V, ID = 250 ID = 250 A Min 100 V 105 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 10 A Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 RDS(on) A 2 Forward Transconductance ID(on) gFS Input Capacitance Ciss Output Capacitance Coss 2.6 -5 A, Referenced to 25 mV/ VGS = 10 V, ID = 1.3 A 350 480 VGS = 6 V, ID = 1.3 A 376 530 664 955 VGS = 10 V, ID =1.3 A,TJ = 125 On-State Drain Current VGS = 10 V, VDS = 10V VDS = 5 V, ID = 1.3 A VDS = 50 V, VGS = 0 V,f = 1.0 MHz 3 m A 3.6 S 153 pF 5 pF Reverse Transfer Capacitance Crss 1 Turn-On Delay Time td(on) 8 16 ns Turn-On Rise Time tr 4 8 ns Turn-Off Delay Time td(off) 11 20 ns 6 5 ns 3.7 80 nC Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2 Typ www.kexin.com.cn VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN =6 VDS = 50 V, ID = 1.3 A,VGS = 10 V (Note 2) 0.8 nC 1 nC IS VSD VGS = 0 V, IS = 1.3 A (Not 2) pF 0.8 1.3 A 1.2 V