IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to Source Voltage VDSS 60 Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Range 20 Unit V V 10 A 50 A 2.5 PD 1.2 TJ, TSTG -55 to 175 W 1 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W www.kexin.com.cn 1 IC IC SMD Type KDS5670 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = 250 ID = 250 A Min Max 60 V 58 A, Referenced to 25 Unit mV/ Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient ID = 250 A 2 On-State Drain Current RDS(on) ID(on) Forward Transconductance gFS Input Capacitance Ciss 2.4 6.8 A, Referenced to 25 VGS = 10 V, ID = 10 A Static Drain-Source On-Resistance mV/ 0.012 0.014 VGS = 10 V, ID =10 A,TJ = 125 0.019 0.027 VGS = 6 V, ID =9 A 0.014 0.017 VGS = 10 V, VDS = 5V VDS =5V, ID =10 A VDS = 15 V, VGS = 0 V,f = 1.0 MHz A 25 A 39 S 2900 pF Output Capacitance Coss 685 pF Reverse Transfer Capacitance Crss 180 pF Turn-On Delay Time td(on) 16 29 ns 10 20 ns 50 80 ns 23 42 ns 49 70 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Drain-Source Diode Forward Voltage www.kexin.com.cn VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) tf Total Gate Charge Maximum Continuous Drain-Source Diode Forward Current 2 Typ VDS = 20 V, ID = 10 A,VGS = 10 V (Note 2) nC 10.4 nC IS VSD VGS = 0 V, IS = 2.1 A (Not 2) nC 9 0.72 2.1 A 1.2 V