IC IC SMD Type 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS(ON) = 20m RDS(ON) = 35m @ VGS = -10 V @ VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS -30 V Gate to Source Voltage VGS 25 V Drain Current Continuous (Note 1a) -8.8 A Drain Current Pulsed -50 A Power Dissipation for Single Operation (Note 1a) 2.5 Power Dissipation for Single Operation (Note 1b) ID PD Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature 1.2 W 1 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W www.kexin.com.cn 1 IC IC SMD Type KDS6685 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Testconditons VGS = 0 V, ID = -250 ID = -250 A Min Max -30 V -21 A, Referenced to 25 Unit mV/ IDSS VDS = -24 V, VGS = 0 V Gate-Body Leakage, Forward IGSSF VGS = 25V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -25 V, VDS = 0 V -100 nA Gate Threshold Voltage(Not 2) VGS(th) VDS = VGS, ID = -250 -3 V Gate Threshold Voltage Temperature Coefficient(Not 2) Static Drain-Source On-Resistance(Not 2) ID = -250 RDS(on) -1 A -1 Forward Transconductance 15 24 VGS = -4.5 V, ID = -6.7 A 22 32 19 39 VGS = -10 V, VDS = -5V gFS VDS = -5 V, ID = -8.8A Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss VDS = -15 V, VGS = 0 V,f = 1.0 MHz A mV/ VGS = -10 V, ID =-8.8 A ID(on) Output Capacitance -1.7 5 A, Referenced to 25 VGS = -10 V, ID =-8.8 A,TJ = 125 On-State Drain Current -25 m A 24 S 1604 pF 408 pF 202 pF Turn-On Delay Time td(on) 13 23 ns Turn-On Rise Time tr 13.5 24 ns Turn-Off Delay Time td(off) 42 68 ns VDD = -15 V, ID = -1 A,VGS = -10 V, RGEN = 6 (Note 2) Turn-Off Fall Time tf 25 40 ns Total Gate Charge Qg 17 24 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2 Typ www.kexin.com.cn VDS = -15 V, ID =-8.8 A,VGS=-5V(Note 2) 5 nC 6 nC IS VSD VGS = 0 V, IS = -2.1A (Not 2) -0.73 -2.1 A -1.2 V