KEXIN KDV303N

MOSFET
IC
SMD Type
Digital FET, N-Channel
KDV303N
SOT-23
■ Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V
1
operation in 3V circuits. VGS(th) < 1.5V.
0.55
● Very low level gate drive requirements allowing direct
+0.1
1.3-0.1
+0.1
2.4-0.1
RDS(ON) = 0.6Ω @ VGS = 2.7 V.
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
● Gate-Source Zener for ESD ruggedness.
+0.05
0.1-0.01
D
0-0.1
S
G
+0.1
0.38-0.1
+0.1
0.97-0.1
＞6kV Human Body Model
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain to Source Voltage
VDSS
25
V
Gate to Source Voltage
VGSS
8
V
0.68
A
Drain Current- Continuous
ID
Drain Current- pulse
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to- Ambient
Unit
2
A
PD
0.35
W
TJ, Tstg
-55 to +150
℃
RθJA
357
℃/W
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1
MOSFET
IC
SMD Type
KDV303N
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Testconditons
VGS = 0 V, ID = 250 μA
Min
25
μA
VDS =20 V, VGS = 0 V,TJ=55℃
μA
VGS = 8V, VDS = 0 V
100
nA
IGSSR
VGS = -8 V, VDS = 0 V
VDS = VGS, ID = 250 μA
0.65
VGS = 4.5V, ID =0.5A
RDS(on) VGS = 4.5V, ID = 0.2A, TJ =125℃
VGS = 2.7V, ID =0.2 A
VGS = 2.7 V, VDS =5 V
-100
nA
0.8
1.5
V
0.33
0.45
Ω
0.52
0.8
Ω
0.44
0.6
Ω
0.5
A
Forward Transconductance *
gFS
VDS = 5V, ID = 0.5 A
1.45
S
Input Capacitance
Ciss
VDS = 10 V,
50
pF
Output Capacitance
Coss
VGS = 0 V,
28
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
9
Turn-On Delay Time
td(on)
VDD = 6V, ID =0.5A,
3
6
ns
Turn-On Rise Time
tr
8.5
18
ns
Turn-Off Delay Time
VGS = 4.5V, RGEN = 50Ω
pF
td(off)
17
30
ns
Turn-Off Fall Time
tf
13
25
ns
Total Gate Charge
Qg
VDS = 5 V, ID = 0.5A,
1.64
2.3
nC
Gate-Source Charge
Qgs
VGS = 4.5V,
0.38
nC
Gate-Drain Charge
Qgd
0.45
nC
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode ForwardVoltage
IS
VSD
* Pulse Test: Pulse Width ＜ 300μs, Duty Cycle ＜ 2.0%.
2
V
1
VGS(th)
ID(on)
Unit
10
Gate-Body Leakage Current,Reverse
On-State Drain Current *
Max
VDS =20 V, VGS = 0 V
Gate Threshold Voltage *
Static Drain-Source On-Resistance*
Typ
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VGS = 0 V, IS = 0.5 A
0.83
0.3
A
1.2
V
MOSFET
IC
SMD Type
KDV303N
Typical Characteristics
2
VGS = 4.5V
3.5
3.0
2.7
1.2
2.5
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
1.5
2.0
0.9
0.6
1.5
0.3
0
VGS = 2.0V
1.5
2.7
0.5
1
1.5
3.5
4.5
2
0
0.2
0.6
0.8
1
1.2
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.6
2
ID= 0.5A
I D =0.5 A
VGS = 4.5 V
1.4
R DS(on) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
0.4
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
3.0
1
0.5
0
2.5
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation
1.6
1.2
0.8
125°C
25°C
0.4
0
1
1.5
2
2.5
3
3.5
4
VGS , GATE TO SOURCE VOLTAGE (V)
4.5
5
Figure 4. On Resistance Variation with
with Temperature.
Gate-To- Source Voltage.
1
T = -55°C
J
0.8
1
25°C
IS , REVERSE DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
V DS = 5.0V
125°C
0.6
0.4
0.2
0
0
0.5
1
1.5
2
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
V GS = 0V
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
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3
MOSFET
IC
SMD Type
KDV303N
5
V GS , GATE-SOURCE VOLTAGE (V)
150
VDS = 5V
I D = 0.5A
100
10V
4
CAPACITANCE (pF)
15V
3
2
Ciss
50
Coss
20
10
f = 1 MHz
V GS = 0V
C rss
1
0
5
0.1
0
0.4
0.8
1.2
1.6
0.5
2
V
DS
1
2
5
10
25
, DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
5
5
1m
s
10m
s
IT
LIM
N)
O
S(
RD
1
10
0.3
0m
s
1s
10
0.1
0.01
0.1
0.2
0.5
V
DS
s
2
1
1
2
5
10
20
0
0.001
40
0.01
0.1
, DRAI N-SOURCE VOLTAGE (V)
10
100
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.005
R θJA (t) = r(t) * R θJA
R θJA = 357 °C/W
P(pk)
0.01
t1
Single Pulse
0.001
0.01
0.1
1
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
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t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
4
1
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
3
DC
V GS = 4.5V
SINGLE PULSE
R θJA =357°C/W
TA = 25°C
0.03
SINGLE PULSE
R θJA =357° C/W
T A = 25°C
4
POWER (W)
I D , DRAIN CURRENT (A)
3
10
100
300
300