Transistors SMD Type P-Channel 1.25-W, 1.8-V (G-S) Mosfet KI2305DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 P-Channel 1.25-W, 1.8-V (G-S) MOSFET. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS 8 V Continuous drain current (TJ = 150 ) TA=25 -TA=70 ID 3.5 2.8 A Pulsed drain current IDM 12 A Continuous source current (diode conduction) * IS -1.6 A Power dissipation * -- PD 1.25 0.8 W Tj,Tstg -55 to +150 TA=25 TA=70 Operating junction and storage temperature range Junction-to-ambient * t 5 sec Steady State * Surface mounted on FR4 board, t RthJA 100 130 /W 5 sec. www.kexin.com.cn 1 Transistors SMD Type KI2305DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage V(BR)DSS VGS = 0 V, ID = -10 Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) A VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = -5 V, VGS = -4.5 V -6 VDS -5 V, VGS = -2.5 V -3 0.044 0.052 VGS = -2.5 V, ID = -3.0 A 0.060 0.071 VGS = -1.8 V, ID = -2.0 A 0.087 0.108 Qg Ciss 8.5 nC 2 2 1245 VDS = -4V ,VGS = 0 , f = 1 MHz pF 375 Coss Reverse transfer capacitance * Crss 210 td(on) 13 20 25 40 55 80 19 35 tr Turn-off time tf * Pulse test: PW 300 ìs duty cycle Marking Marking A5 www.kexin.com.cn 2%. V 15 Output capacitance * td(off) A S -1.2 10 VDS = -4V ,VGS = -4.5 V , ID= -3.5 A nA A VGS = -4.5 V, ID = -3.5 A Total gate charge * Input capacitance * V 100 VDS IS = -1.6 A, VGS = 0 V Unit -0.45 -10 VDS = -5 V, ID = -3.5 A Qgs -8 VDS = -6.4 V, VGS = 0 V, TJ = 55 gfs Qgd Max -1 VSD Gate-source charge * Typ VDS = -6.4 V, VGS = 0 V Diode forward voltage Gate-drain charge * Min 8V Forward transconductance Turn-on time 2 Testconditons VDD = -4V , RL = 4Ù , ID = -1A , VGEN =- 4.5V , RG = 6Ù ns