KEXIN KI4300DY

IC
IC
SMD Type
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
KI4300DY
Features
TrenchFET Power MOSFET
LITTLE FOOT PlusTM Integrated Schottky
PWM Optimized
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage (MOSFET)
VDS
30
Reverse Voltage (Schottky)
VDA
30
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
) TA = 25
(MOSFET)*
ID
TA = 70
Pulsed Drain Current (MOSFET)
V
20
9
6.4
7
5.1
40
IDM
A
Continuous Source Current (MOSFET Diode Conduction)*
IS
2.3
1.25
Average Foward Current (Schottky)
IF
2.3
1.25
Pulsed Foward Current (Schottky)
20
IFM
Maximum Power Dissipation (MOSFET)* TA = 25
2.5
1.38
TA = 70
1.6
0.88
2.2
1.25
PD
Maximum Power Dissipation (Schottky)* TA = 25
1.4
TA = 70
Operating Junction and Storage Temperature Range
TJ, Tstg
Unit
W
0.8
-55 to 150
*Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI4300DY
Thermal Resistance Ratings
MOSFET
Parameter
t
Maximum Junction-to-Ambient *
10 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Schottky
Symbol
Steady-State
RthJF
Unit
Typ
Max
Typ
Max
40
50
45
55
70
90
78
100
18
23
25
30
/W
* Surface Mounted on 1" X 1" FR4 Board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
VDS = VGS, ID = 250
VDS = 0 V, VGS =
Min
Typ
Max
0.8
A
20 V
100
VDS = 24 V, VGS = 0 V
100
VDS = 24 V, VGS = 0 V, TJ = 85
2000
VDS
30
5 V, VGS = 10 V
A
VGS = 10 V, ID = 9 A
0.0155 0.0185
VGS = 4.5 V, ID = 7 A
0.0275 0.033
VDS = 15 V, ID = 9 A
16
Schottky Diode Forward Voltage*
VSD
IS = 1.0 A, VGS = 0 V
0.47
0.5
Total Gate Charge
Qg
8.7
13
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
* Pulse test :Pulse width
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Irm
CT
300 s,duty cycle 2%
S
V
nC
2.25
4.2
Rg
Turn-Off Delay Time
Junction Capacitance
VDS = 15 V, VGS = 5 V, ID = 9 A
0.5
td(on)
Rise Time
nA
A
gfs
Turn-On Delay Time
Unit
V
Forward Transconductanceb
Gate Resistance
2
IDSS
Testconditons
VDD=15V,RL=15
,ID=1A,VGEN=10V,RG=6
IF = 2.3 A, di/dt = 100 A/
s
2.7
11
16
8
15
22
30
9
15
32
60
ns
ns
IF = 1.0 A
0.47
0.5
V
IF = 1.0 A, TJ = 125
0.36
0.42
V
Vr = 24 V
0.004
0.100
Vr = 24 V, TJ = 100
0.7
10
Vr = -24 V, TJ = 125
3.0
20
Vr = 10 V
50
mA
pF