KEXIN KI4920DY

IC
IC
SMD Type
Dual N-Channel 30-V (D-S) MOSFET
KI4920DY
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
ID
6.9
Continuous Drain Current (TJ = 150
)*
TA = 25
TA = 70
Pulsed Drain Current
5.5
IDM
Continuous Source Current (Diode Conduction) *
TA = 25
Maximum Power Dissipation *
IS
PD
Maximum Junction-to-Ambient*
* Surface Mounted on FR4 Board, t
V
A
40
1.7
2
A
W
1.3
TA = 70
Operating Junction and Storage Temperature Range
Unit
TJ, Tstg
-55 to 150
RthJA
62.5
/W
10 sec.
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1
IC
IC
SMD Type
KI4920DY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
IDSS
Zero Gate Voltage Drain Current
On-State Drain Current *
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = VGS, ID = 250 ìA
VDS = 0 V, VGS =
Min
Typ
Max
1
20 V
100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55
25
VDS
20
5 V, VGS = 10 V
nA
A
A
VGS = 10 V, ID =6.9 A
0.02
0.025
0.035
VGS = 4.5 V, ID = 5.8 A
0.026
gfs
VDS = 15 V, ID = 6.9 A
25
Schottky Diode Forward Voltage*
VSD
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Qg
VDS = 15 V, VGS = 5V, ID = 6.9 A
Total Gate Charge
Qgt
Gate-Source Charge
Qgs
S
1.2
VDS = 15 V, VGS = 10 V, ID = 6.9 A
Unit
V
Forward Transconductance*
V
15
23
nC
30
50
nC
7.5
nC
Gate-Drain Charge
Qgd
3.5
Turn-On Delay Time
td(on)
12
20
ns
10
20
ns
Rise Time
VDD = 15 V, RL = 15 Ù
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
2
Testconditons
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300
s, duty cycle
2 %.
ID = 1 A, VGEN = 10 V, RG = 6 Ù
IF = 1.7 A, di/dt = 100 A/
s
nC
60
90
ns
15
30
ns
50
90
ns