KEXIN KMBT2222A

Transistors
SMD Type
NPN Switching Transistor
KMBT2222A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
● Low voltage (max.40 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
● High current (max. 600 mA)
0.4
3
■ Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
75
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
IC
600
mA
Total power dissipation Ta≤ 25 ℃
Ptot
300
mW
Thermal resistance from junction to ambient
RèJA
417
K/W
Tj, TSTG
-65 to +150
℃
Collector current
Operating and Storage and Temperature Range
www.kexin.com.cn
1
Transistors
SMD Type
KMBT2222A
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10μA, IE = 0
75
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
40
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 10 μA, I C = 0
6
V
ICBO
Collector cutoff current
Emitter cutoff current
IEBO
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 125 ℃
10
μA
IC = 0; VEB = 3 V
10
nA
IC = 0.1 mA; VCE = 10 V
DC current gain
hFE
collector-emitter saturation voltage
base-emitter saturation voltage
VCEsat
VBEsat
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V; Ta = -55 ℃
35
IC= 150 mA; VCE = 10 V
100
IC = 150 mA; VCE = 1 V
50
IC = 500 mA; VCE = 10 V
40
300
IC = 150 mA; IB = 15 mA
300
mV
IC = 500 mA; IB = 50 mA
1
V
1.2
V
IC = 500 mA; IB = 50 mA
2
V
IC = 150 mA; IB = 15 mA
0.6
Delay time
Rise time
td
tr
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
15
25
ns
ns
Storage time
ts
IB1 = IB2 = 15 mA,
200
ns
Fall time
tf
IC = 150 mA, VCC = 30V
60
ns
Output Capacitance
Cobo
VCB = 10V, f = 1.0MHz, IE = 0
8
pF
Input Capacitance
Cibo
VEB = 0.5V, f = 1.0MHz, IC = 0
25
pF
Noise Figure
NF
VCE = 10 V, IC = 100 μA,RS = 1 kΩ, f = 1 kHz
Transition frequency
fT
■ Marking
Marking
2
Min
www.kexin.com.cn
1P
IC = 20 mA; VCE = 20 V; f = 100 MHz
4
300
dB
MHz
Transistors
SMD Type
KMBT2222A
1000
300
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
250
200
150
100
TA = 125°C
100
TA = +25°C
TA = -25°C
10
50
VCE = 1.0V
0
0
25
50
75
100
125
150
175
1
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
100
VCE COLLECTOR-EMITTER VOLTAGE (V)
2.0
20
CAPACITANCE (pF)
10
IC, COLLECTOR CURRENT (mA)
Fig. 2, Typical DC Current Gain vs
Collector Current
30
Cibo
10
5.0
Cobo
1.0
1
0.1
0.1
1.0
10
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
50
1.8
IC = 30mA
IC = 1mA
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
www.kexin.com.cn
3