IC IC SMD Type MOS Field Effect Transistor KPA1816 TSSOP-8 Features Unit: mm 1.8V drive available Low on-state resistance RDS(on)1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A) RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A) RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A) RDS(on)4 = 41.5 m TYP. (VGS = -1.8 V, ID = -2.5 A) 1, 2, 3 : Source 4: Built-in G-S protection diode against ESD Gate 5, 6, 7, 8: Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit -12 V Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS 8.0 V Drain Current (DC) Ta = 25 ID(DC) 9.0 A Drain Current (Pulse) *1 ID(pulse) 36 Total Power Dissipation(2 unit) *2 PT 2.0 Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 *1 PW 10 s, Duty cycle A W 1% *2 Mounted on ceramic substrate of 5000mm2 X1.1 mm www.kexin.com.cn 1 IC IC SMD Type KPA1816 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Testconditons IDSS VDS = -12 V, VGS = 0 IGSS VGS = Min Typ 8V, VDS = 0 Max Unit -1.0 A 10 A VGS(off) VDS = -10 V, ID =- 1 mA | yfs | VDS = -10 V, ID = -4.5A RDS(on)1 VDS =- 4.5V, ID = -4.5 A 12.0 15 m RDS(on)2 VGS = -4.0V, ID = -4.5 A 12.5 16 m RDS(on)3 VGS = -2.5V, ID = -4.5 A 16.2 22.5 m RDS(on)4 VGS = -1.8 V, ID = -2.5 A 23.7 41.5 m Input Capacitance Ciss Output Capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz -0.45 -0.75 11 -1.5 22 V S 1570 pF 400 pF Reverse Transfer Capacitance Crss 240 pF Turn-on Delay Time td(on) 16 ns 132 ns 223 ns 295 ns 15 nC 3.0 nC 4.5 nC Rise Time Turn-off Delay Time Fall Time Total Gate Charge tr td(off) ID = -4.5 A, VGS = -4.0 V, VDD =-10 V,RG = 10 tf QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode forward Voltage 2 Symbol VF(S-D) ID = -9.0A, VDD = -10V, VGS = -4.0 V IF = 9.0 A, VGS = 0 0.82 V Reverse Recovery Time trr IF = 9.0 A, VGS = 0 V 490 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 580 nC www.kexin.com.cn s