IC
IC
SMD Type
HEXFET Power MOSFET
KRF7309
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25
ID
4.7
-3.5
Continuous Drain Current VGS @ 10V Ta = 25
ID
4.0
-3.0
Continuous Drain Current VGS @ 10V Ta = 70
ID
3.2
-2.4
Pulsed Drain Current *1
IDM
16
Power Dissipation
PD
@Ta= 25
*3
W
0.011
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*4
6.9
W/
-6.0
20
V/ ns
V
-55 to + 150
TJ, TSTG
R
A
-12
1.4
Linear Derating Factor (PCB Mount)*4
Unit
90
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
P-Channel ISD
*3 Pulse width
2.4A, di/dt
-1.8A, di/dt
73A/
90A/
300 s; duty cycle
s, VDD
s, VDD
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
2%.
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).
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IC
IC
SMD Type
KRF7309
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Testconditons
Symbol
30
VGS = 0V, ID = -250 A
P-Ch
-30
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.032
TJ
ID = -1mA,Reference to 25
P-Ch
-0.037
V(BR)DSS
RDS(on)
VGS = 4.5V, ID = 2.0A*1
VGS = -10V, ID = -1.8A*1
VGS = -4.5V, ID = -1.5A*1
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS(th)
gfs
IDSS
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Drain Inductace
LD
Internal Source Inductance
Input Capacitance
2
IGSS
LS
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
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Max
V/
0.050
N-Ch
0.080
0.10
P-Ch
0.16
N-Ch
1.0
VDS = VGS, ID = -250 A
P-Ch
-1.0
VDS =15V, ID = 2.4A*1
N-Ch
5.2
VDS = -24V, ID = -1.8A*1
P-Ch
2.5
VDS = 24V, VGS = 0V
N-Ch
1.0
VDS = -24V, VGS = 0V
P-Ch
-1.0
VDS = 24V, VGS = 0V, TJ = 125
N-Ch
25
P-Ch
-25
VGS =
20V
V
S
N-Ch
100
P-Ch
100
N-Channel
N-Ch
25
ID =2.6A,VDS = 16V,VGS =4.5V
P-Ch
25
N-Ch
2.9
P-Channel
P-Ch
2.9
ID = -2.2A,VDS = -16V,VGS = -4.5V
N-Ch
7.9
P-Ch
9.0
N-Channel
N-Ch
6.8
VDD = 10V,ID = 2.6A,RG = 6.0
P-Ch
11
RD = 3.8
N-Ch
21
P-Channel
P-Ch
17
VDD = -10V,ID = -2.2A,RG = 6.0
N-Ch
22
RD = 4.5
P-Ch
25
N-Ch
7.7
P-Ch
18
N-Ch
4.0
Between lead tip
P-Ch
4.0
and center of die contact
N-Ch
6.0
P-Ch
6.0
N-Channel
N-Ch
520
VGS = 0V,VDS = 15V,f = 1.0MHz
Unit
V
VDS = VGS, ID = 250 A
VDS = -24V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
Typ
N-Ch
VGS = 10V, ID = 2.4A*1
Static Drain-to-Source On-Resistance
Min
VGS = 0V, ID = 250 A
P-Ch
440
N-Ch
180
P-Channel
P-Ch
200
VGS = 0V,VDS = -15V,f = 1.0MHz
N-Ch
72
P-Ch
93
A
nA
nC
ns
nH
pF
IC
IC
SMD Type
KRF7309
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
Forward Turn-On Time
ton
300 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
1.8
P-Ch
-1.8
N-Ch
16
P-Ch
-12
TJ = 25 , IS = 1.8A, VGS = 0V*1
N-Ch
1.0
TJ = 25 , IS = -1.8A, VGS = 0V*1
P-Ch
-1.0
N-Channel
TJ = 25 , IF =2.6A,di/dt = 100A/
s*1
P-Channel
TJ=25 ,IF=-2.2A,di/dt=-100A/
s*1
Intrinsic turn-on time is neglegible
(turn-on is dominated by LS+LD)
N-Ch
47
71
P-Ch
53
80
N-Ch
56
84
P-Ch
66
99
Unit
A
V
ns
nC
N-Ch
P-Ch
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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