IC
IC
SMD Type
HEXFET Power MOSFET
KRF7389
Features
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
30
-30
V
ID
7.3
-5.3
Continuous Drain Current Ta = 70
ID
5.9
-4.2
Pulsed Drain Current *1
IDM
30
-30
IS
2.5
-2.5
Drain-Source Voltage
Continuous Drain Current Ta = 25
Continuous Source Current (Diode Conduction)
Power Dissipation
@Ta= 25
2.5
PD
W
1.6
@Ta= 70
A
20
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy
EAS
82
140
mJ
IAR
4.0
-2.8
A
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
0.20
3.8
Maximum Junction-to-Ambient *3
R
mJ
-2.2
V/ns
-55 to + 150
TJ, TSTG
Junction and Storage Temperature Range
V
50
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
4.0A, di/dt
P-Channel ISD
-2.8A, di/dt
74A/
s, VDD
1500A/
*3 Surface mounted on FR-4 board, t
s, VDD
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
10sec.
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IC
IC
SMD Type
KRF7389
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
VGS = 0V, ID = 250 A
P-Ch
-30
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.022
TJ
ID = 1mA,Reference to 25
P-Ch
0.022
V(BR)DSS
RDS(on)
RDS(on)
IDSS
IGSS
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
tr
td(off)
Turn-Off Delay Time
VGS = 10V, ID = 5.8A*1
VGS = 4.5V, ID = 4.7A*1
VGS = -10V, ID = -4.9A*1
VGS = -4.5V, ID = -3.6A*1
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Continuous Source Current
Body Diode)
Body Diode) *2
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IS
ISM
Max
V
V/
0.032 0.046
0.042 0.058
P-Ch
.076 0.098
N-Ch
1
VDS = VGS, ID = -250 A
P-Ch
-1.0
V
VDS = 15V, ID = 5.8A*1
N-Ch
14
VDS = -15V, ID = -4.9A*1
P-Ch
7.7
VDS = 24V, VGS = 0V
N-Ch
1.0
VDS = -24V, VGS = 0V
P-Ch
-1.0
VDS = 24V, VGS = 0V, TJ = 55
N-Ch
25
VDS = -24V, VGS = 0V, TJ = 55
P-Ch
-25
VGS =
20V
S
N-Ch
100
P-Ch
100
N-Channel
N-Ch
22
33
ID = 5.8A,VDS = 15V,VGS =10V
P-Ch
23
34
N-Ch
2.6
3.9
P-Channel
P-Ch
3.8
5.7
ID = -4.9A,VDS = -15V,VGS = -10V
N-Ch
6.4
9.6
P-Ch
5.9
8.9
N-Channel
N-Ch
8.1
12
VDD = 15V,ID = 1.A,RG = 6.0
P-Ch
13
19
RD=15
N-Ch
8.9
13
P-Channel
P-Ch
13
20
VDD = -15V,ID = -1.8A,RG = 6.0
N-Ch
26
39
P-Ch
34
51
N-Ch
17
26
48
RD=15
N-Channel
VGS = 0V,VDS = 25V,f = 1.0MHz
Unit
0.023 0.029
N-Ch
VDS = VGS, ID = 250 A
tf
Fall Time
2
30
Total Gate Charge
Rise Time
Typ
N-Ch
gfs
Drain-to-Source Leakage Current
Min
VGS = 0V, ID = 250 A
VGS(th)
Forward Transconductance
Pulsed Source Current
Testconditons
Symbol
P-Ch
32
N-Ch
650
P-Ch
710
N-Ch
320
P-Channel
P-Ch
380
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
130
P-Ch
180
A
nA
nC
ns
pF
N-Ch
2.5
P-Ch
-2.5
N-Ch
30
P-Ch
-30
A
IC
IC
SMD Type
KRF7389
Electrical Characteristics Ta = 25
Parameter
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
300 s; duty cycle
Testconditons
Symbol
Typ
Max
TJ = 25 , IS = 1.7A, VGS = 0V*1
N-Ch
Min
0.78
1.0
TJ = 25 , IS = -1.7A, VGS = 0V*1
P-Ch
-0.78
-1.0
N-Ch
45
68
P-Ch
44
66
N-Ch
58
87
s*1 P-Ch
42
63
N-Channel
TJ = 25 , IF =1.7A,di/dt = 100A/
P-Channel
TJ = 25 , IF =-1.7A,di/dt = -100A/
s*1
Unit
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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