IC
IC
SMD Type
HEXFET Power MOSFET
KRF7504
Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Continuous Drain Current, VGS @ -4.5V @ TA = 25
Parameter
ID
-1.7
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
-1.4
Pulsed Drain Current *1
IDM
-9.6
PD
1.25
Power Dissipation *2
@TA= 25
Linear Derating Factor
10
Gate-to-Source Voltage
VGS
12
Peak Diode Recovery dv/dt *3
dv/dt
-5.0
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
R
JA
100
Unit
A
W
m W/
V
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t
*3 ISD
-1.2A, di/dt
100A/
s, VDD
10sec
V(BR)DSS,TJ
150
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IC
IC
SMD Type
KRF7504
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS = 0V, ID = -250 A
Min
V/
0.27
VGS = -2.7V, ID = -0.60A*1
0.40
gfs
VDS = -10V, ID = -0.60A*1
1.3
V
S
VDS = -16V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 125
-25
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = -1.2A
5.4
8.2
Gate-to-Source Charge
Qgs
VDS = -16V
0.96
1.4
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V
2.4
3.6
Turn-On Delay Time
td(on)
VDD = -10V
9.1
tr
ID = -1.2A
35
td(off)
RD = 8.3
38
Rg = 6
43
Rise Time
Turn-Off Delay Time
Fall Time
tf
Input Capacitance
Ciss
VGS = 0V
240
Output Capacitance
Coss
VDS = -15V
130
Reverse Transfer Capacitance
Crss
f = 1.0MHz
64
Continuous Source Current
Body Diode)
Unit
V
VGS = -4.5V, ID = -1.2A*1
-0.7
IGSS
Max
-0.012
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-20
VGS(th)
IDSS
Gate-to-Source Forward Leakage
Testconditons
A
nA
nC
ns
pF
IS
-1.25
ISM
-9.6
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
V
Reverse Recovery Time
trr
TJ = 25 , IF =-1.2A
52
78
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
63
95
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
TJ = 25 , IS = -1.2A, VGS = 0V*1
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s*1