IC
IC
SMD Type
HEXFET Power MOSFET
KRF7506
Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ -10V @ TA = 25
ID
-1.7
Continuous Drain Current, VGS @ -10V @ TA = 70
ID
-1.4
Pulsed Drain Current *1
IDM
-9.6
PD
1.25
@TA= 25
Power Dissipation *2
Linear Derating Factor
10
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *3
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
20
dv/dt
5.0
TJ, TSTG
-55 to + 150
R
JA
100
Unit
A
W
m W/
V
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t
*3 ISD
-1.2A, di/dt
-140A/
s, VDD
10sec
V(BR)DSS,TJ
150
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IC
IC
SMD Type
KRF7506
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS = 0V, ID = -250 A
Min
Typ
Max
-30
V
-0.039
TJ ID = -1mA,Reference to 25
V/
VGS = -10V, ID = -1.2A*1
0.27
VGS = -4.5V, ID = -0.60A*1
0.45
VDS = VGS, ID = -250 A
-1.0
V
gfs
VDS = -10V, ID = -0.60A*1
0.92
S
IGSS
Gate-to-Source Reverse Leakage
VDS = -24V, VGS = 0V
-1.0
VDS = -24V, VGS = 0V, TJ = 125
-25
VGS = -20V
-100
VGS = 20V
100
Total Gate Charge
Qg
ID = -1.2A
7.5
11
Gate-to-Source Charge
Qgs
VDS = -24V
1.3
1.9
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V
2.5
3.7
Turn-On Delay Time
td(on)
VDD = -15V
9.7
Rise Time
Turn-Off Delay Time
Fall Time
tr
ID = -1.2A
12
td(off)
RD = 6.2
19
tf
Rg = 12
9.3
Input Capacitance
Ciss
VGS = 0V
180
Output Capacitance
Coss
VDS = -25V
87
Reverse Transfer Capacitance
Crss
f = 1.0MHz
42
Continuous Source Current
Body Diode)
Unit
VGS(th)
IDSS
Gate-to-Source Forward Leakage
Testconditons
A
nA
nC
ns
pF
IS
-1.25
ISM
-9.6
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
-1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF =-1.2A
30
45
ns
Reverse RecoveryCharge
Qrr
di/dt = -100A/
37
55
nC
*1 Pulse width
300 s; duty cycle
TJ = 25 , IS = -1.2A, VGS = 0V*1
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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s*1