IC
IC
SMD Type
HEXFET Power MOSFET
KRF7507
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Unit
V
VDS
20
-20
Continuous Drain Current VGS Ta = 25
ID
2.4
-1.7
Continuous Drain Current VGS Ta = 70
ID
1.9
-1.4
Pulsed Drain Current *1
IDM
21
Drain-Source Voltage
Power Dissipation
@Ta= 25
Power Dissipation
@Ta= 70
-14
1.25
PD
W
0.8
10
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
R
V
16
dv/dt
Maximum Junction-to-Ambient*3
mW/
12
5.0
V
-5.0
V/ ns
-55 to + 150
TJ, TSTG
Junction and Storage Temperature Range
A
100
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
P-Channel ISD
1.7A, di/dt
-1.2A, di/dt
100A/
s, VDD
V(BR)DSS, TJ
150
50A/
s, VDD
V(BR)DSS, TJ
150
*3 Surface mounted on FR-4 board, t
10sec.
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IC
IC
SMD Type
Electrical Characteristics TJ = 25
Parameter
Testconditons
Symbol
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
20
VGS = 0V, ID = -250 A
P-Ch
-20
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.041
TJ
ID = -1mA,Reference to 25
P-Ch
0.012
V(BR)DSS
RDS(on)
VGS = 2.7V, ID = 0.85A*1
VGS = -4.5V, ID = -1.2A*1
VGS = -2.7V, ID = -0.6A*1
VGS(th)
Gate Threshold Voltage
Forward Transconductance
gfs
Drain-to-Source Leakage Current
IDSS
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Pulsed Source Current
Body Diode)
Body Diode) *2
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IS
ISM
P-Ch
0.7
VDS = VGS, ID = -250 A
P-Ch
-0.7
V
V/
0.17
0.27
0.28
0.40
V
VDS =10V, ID = 0.85A*1
N-Ch
2.6
VDS = -10V, ID = -0.6A*1
P-Ch
1.3
VDS = 16V, VGS = 0V
N-Ch
1.0
VDS = -16V, VGS = 0V
P-Ch
-1.0
VDS = 16V, VGS = 0V, TJ = 125
N-Ch
25
P-Ch
-25
VGS =
12V
S
N-Ch
100
P-Ch
100
N-Channel
N-Ch
5.3
8.0
ID =1.7A,VDS = 16V,VGS =4.5V *1
P-Ch
5.4
8.2
N-Ch
0.84
1.3
P-Channel
P-Ch
0.96
1.4
ID = -1.2A,VDS = -16V,VGS = -4.5V *1
N-Ch
2.2
3.3
P-Ch
2.4
3.6
N-Channel
N-Ch
5.7
VDD = 10V,ID = 1.7A,RG = 6.0
P-Ch
9.1
RD = 5.7
N-Ch
24
P-Channel
P-Ch
35
VDD = -10V,ID = -1.2A,RG = 6.0
N-Ch
15
P-Ch
38
*1
RD = 8.3 1*1
Unit
0.120 0.20
N-Ch
tf
Continuous Source Current
2
IGSS
Max
0.085 0.14
N-Ch
VDS = VGS, ID = 250 A
VDS = -16V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
Typ
N-Ch
VGS = 4.5V, ID = 1.7A*1
Static Drain-to-Source On-Resistance
Min
VGS = 0V, ID = 250 A
N-Ch
16
P-Ch
43
N-Channel
N-Ch
260
VGS = 0V,VDS = 15V,f = 1.0MHz *1
P-Ch
240
N-Ch
130
P-Channel
P-Ch
130
VGS = 0V,VDS = -15V,f = 1.0MHz *1
N-Ch
61
P-Ch
64
A
nA
nC
ns
pF
N-Ch
1.25
P-Ch
-1.25
N-Ch
19
P-Ch
-14
A
IC
IC
SMD Type
KRF7507
Electrical Characteristics TJ = 25
Parameter
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
300 s; duty cycle
Testconditons
Symbol
Min
Typ
Max
TJ = 25 , IS = 1.7A, VGS = 0V*1
N-Ch
1.2
TJ = 25 , IS = -1.2A, VGS = 0V*1
P-Ch
-1.2
N-Channel
TJ = 25 , IF =1.7A,di/dt = 100A/
s*1
P-Channel
TJ=25 , IF=-1.2A,di/dt=-100A/
s*1
N-Ch
39
59
P-Ch
52
78
N-Ch
37
56
P-Ch
63
95
Unit
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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