IC
IC
SMD Type
HEXFET Power MOSFET
KRF7530
Features
Trench Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
20
A
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
5.4
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
4.3
Pulsed Drain Current*1
IDM
40
Power Dissipation Ta = 25
PD
1.3
Power Dissipation Ta = 70
PD
0.8
10
mW/
Single Pulse Avalanche Energy *2
EAS
33
mJ
Gate-to-Source Voltage
VGS
Drain- Source Voltage
Linear Derating Factor
Junction and Storage Temperature Range
Junction-to-Ambient *1
1* Surface mounted on FR-4 board, t
12
TJ, TSTG
-55 to + 150
R JA
100
A
W
V
/W
10sec.
*2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A.
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1
IC
IC
SMD Type
KRF7530
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
TJ
Min
V/
0.030
VGS = 2.5V, ID =4.6A*1
0.045
0.60
VDS = 10V, ID = 5.4A*1
13
1.2
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 70
25
VGS = 12V
-100
VGS = -12V
100
Qg
ID = 5.4A
18
26
Gate-to-Source Charge
Qgs
VDS = 16V
3.4
5.1
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 4.5V,*1
3.4
5.1
Turn-On Delay Time
td(on)
VDD =10V
8.5
tr
ID = 1.0A
11
td(off)
RG =6.0
36
tf
RD = 10
Turn-Off Delay Time
Fall Time
Ciss
VGS = 0V
1310
Output Capacitance
Coss
VDS = 15V
180
Reverse Transfer Capacitance
Crss
f = 1.0MHz
150
Body Diode)
A
nA
nC
ns
16
Input Capacitance
Continuous Source Current
V
S
Total Gate Charge
Rise Time
Unit
V
VGS = 4.5V, ID = 5.4A*1
VDS = VGS, ID = 250 A
Gate-to-Source Reverse Leakage
Max
0.01
ID = 1mA,Reference to 25
gfs
IGSS
Typ
20
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250 A
pF
IS
1.3
ISM
40
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF = 1.3A.VR=10V
19
29
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
13
20
nC
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25 , IS = 1.3A, VGS = 0V*1
s*1