IC
IC
SMD Type
HEXFET Power MOSFET
KRF7601
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
5.7
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
4.6
Pulsed Drain Current*1
IDM
30
PD
1.8
Power Dissipation Ta = 25
*1
Linear Derating Factor
14
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD
3.8A, di/dt
96A/
s, VDD
*2 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
12
dv/dt
5
TJ, TSTG
-55 to + 150
R JA
70
Unit
A
W
W/
V
V/ns
/W
150
10sec.
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1
IC
IC
SMD Type
KRF7601
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Typ
Max
20
V
0.024
ID = 1mA,Reference to 25
V/
VGS = 4.5V, ID = 3.8A*1
0.035
VGS = 2.7V, ID =1.9A*1
0.050
VDS = VGS, ID = 250 A
0.70
V
gfs
VDS = 10V, ID = 1.9A*1
6.1
S
IGSS
Gate-to-Source Reverse Leakage
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 125
25
VGS = 12V
-100
VGS = -12V
100
Total Gate Charge
Qg
ID = 3.8A
14
22
Gate-to-Source Charge
Qgs
VDS = 16V
2.0
3.0
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 4.5V,*1
6.3
9.5
Turn-On Delay Time
td(on)
VDD = 10V
5.1
Rise Time
tr
ID = 3.8A
47
td(off)
RG =6.2
24
tf
RD = 2.6
32
Input Capacitance
Ciss
VGS = 0V
650
Output Capacitance
Coss
VDS = 15V
300
Reverse Transfer Capacitance
Crss
ƒ= 1.0MHz
150
Turn-Off Delay Time
Fall Time
Continuous Source Current
Body Diode)
Unit
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250 A
TJ
Min
A
nA
nC
ns
pF
IS
1.8
ISM
30
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF = 3.8A.VR=10V
51
77
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
69
100
nC
*1 Pulse width
300µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25 , IS = 3.8A, VGS = 0V*1
s*1