Transistors SMD Type PNP Epitaxial Silicon Transistor KSA1201 Features Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V IC -800 mA Collector Current Base Current Collector Power Dissipation IB -160 mA PC 500 mW PC* 1,000 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC= -10mA, IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE= -1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB= -120V, IE=0 -100 nA Emitter Cut-off Current IEBO VBE= -5V, IC=0 -100 nA hFE VCE= -5V, IC= -100mA Collector-Emitter Saturation Voltage VCE (sat) IC= -500mA, IB=-50mA -1.0 V Base-Emitter On Voltage VBE (on) VCE= -5V, IC= -500mA -1.0 V fT VCE= -5V, IC= -100mA DC Current Gain Current Gain Bandwidth Product Output Capacitance Cob VCB= -10V, IE=0, f=1MHz 80 240 120 MHz 30 pF hFE Classification Marking SDO SDY Rank O Y Type 80 160 120 240 www.kexin.com.cn 1