Transistors IC SMD Type N-Channel Enhancement Mode Vertical D-MOS Transistor KSS87 SOT-89 Features Unit: mm +0.1 4.50-0.1 Direct interface to C-MOS, TTL, etc. +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 No secondary breakdown +0.1 4.00-0.1 High-speed switching Low RDSon. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 0.40 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1 3.00-0.1 1. Source Base 1. Collector 2.2. Drain Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage (DC) gate-source voltage (DC) open drain Symbol Rating Unit VDS 200 V VGSO 20 V drain current (DC) ID 400 mA peak drain current IDM 1.6 A W Ptot 1 storage temperature Tstg -55 to 150 junction temperature Tj 150 Rth j-a 125 total power dissipation Tamb 25 * thermal resistance from junction to ambient * K/W * Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum10 X10 mm www.kexin.com.cn 1 Transistors IC SMD Type KSS87 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage drain-source leakage current Symbol V(BR)DSS IDSS Testconditons ID = 250 Min IGSS VGS = gate-source threshold voltage VGSth ID = 1 mA; VGS = VDS drain-source on-state resistance RDSon ID = 400 mA; VGS = 10 V transfer admittance | Yfs| ID = 400 mA; VDS = 25 V Unit 200 nA 60 A V 0.1 20 V; VDS = 0 100 0.8 2.8 1.6 140 nA V 3 750 mS input capacitance Ciss VDS = 25 V; VGS = 0;f = 1 MHz 100 120 pF output capacitance Coss VDS = 25 V; VGS = 0;f = 1 MHz 20 30 pF reverse transfer capacitance Crss VDS = 25 V; VGS = 0;f = 1 MHz 10 15 pF Switching turn-on time (see Figs 1 and 2) ton ID = 250 mA; VDD = 50 V;VGS = 0 to 10 V 6 10 ns Switching turn-off time (see Figs 1 and 2) toff ID = 250 mA; VDD = 50 V;VGS = 0 to 10 V 49 60 ns Fig.1 Switching times test circuit. 2 Max 200 A; VGS = 0 VDS = 60 V; VGS = 0 VDS = 200 V; VGS = 0 gate-source leakage current Typ www.kexin.com.cn Fig.2 Input and output waveforms.