KEXIN KST9015

Transistors
SMD Type
PNP Transistors
KST9015
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
Complementary to KST9014
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-0.1
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
Ic=-100uA, IE=0
-50
V
Collector-emitter breakdown voltage
VCEO
Ic=-1mA, IB=0
-45
V
Emitter-base Breakdown voltage
VEBO
IE=-100ìA, IC=0
-5
Collector cutoff current
ICBO
VCB=-50V, IE=0
-0.1
A
Emitter cutoff current
IEBO
VEB=-5V, IC=0
-0.1
A
hFE
VCE=-5V, IC=-1mA
DC current gain
200
V
1000
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
-1
V
Transition frequency
fT
VCE=-5V, IC=-10mA,f=30MHZ
150
MHz
hFE Classification
M6
Marking
Rank
L
H
hFE
200 to 450
450 to 1000
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1
Transistors
Diodes
SMD Type
KST9015
Typical Characteristics
2
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