KEXIN KST9018

IC
Transistors
SMD Type
NPN Silicon Transistor
KST9018
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
● power dissipation.(PC=200mW)
1
0.55
● High current gain bandwidth product.
+0.1
1.3-0.1
+0.1
2.4-0.1
■ Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
5
V
Collector Current to Continuous
IC
50
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Collector to base breakdown voltage
Testconditons
V(BR)CBO IC= 100μA, IE=0
Collector to emitter breakdown voltage
IC= 1mA, IB=0
V(BR)CEO
Emitter to base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Min
Typ
Max
Unit
30
V
15
V
5
V
Collector cut to off current
ICBO
VCB=12V, IE=0
0.05
μA
Emitter cut to off current
IEBO
VEB= 3V, IC=0
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
70
190
Collector to emitter saturation voltage
VCE(sat)
IC=10mA, IB= 1mA
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC=10mA, IB= 1mA
1.4
V
Transition frequency
fT
VCE=5V, IC= 5mA,f=400MHz
600
MHz
■ Marking
Marking
J8
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