IC IC SMD Type DC/DC Converter Applications KTS2003 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-to-Source Voltage Parameter VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current(DC) ID 4 A Drain Current(pulse) *1 IDP 25 A Allowable Power Dissipation *2 PD 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) www.kexin.com.cn 1 IC IC SMD Type KTS2003 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance Testconditons IDSS VDS = 20 V, VGS = 0 V IGSS VGS = Typ VDS = 10 V, ID = 4 A Max 20 Unit V 10 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs Min A 10 0.4 7 1.3 10 A V S RDS(on)1 VGS = 4 V, ID = 4A 38 50 m RDS(on)2 VGS = 2.5 V, ID = 2 A 50 70 m Input Capacitance Ciss VDS = 10 V 500 pF Output Capacitance Coss VGS = 0 V 280 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) 20 ns See Specified Test Circuit 200 ns 80 ns Rise Time Turn-off Delay Time tr td(off) 150 ns Total Gate Charge Qg VDS= 10 V 22 nC Gate-to-Source "Miller" Charge Qgs VGS = 10 V 3 nC Gate-Drain Charge Qgd ID = 4 A Diode Forward Voltage VSD IF = 4 A, VGS = 0 V Fall Time Switching Time Test Circuit 2 Symbol V(BR)DSS ID=1mA, VGS=0 www.kexin.com.cn tf 3 0.82 nC 1.2 V