Transistors IC SMD Type 250V P-Channel Enhancement Mode Vertical MOSFET KVP4424Z SOT-89 Features 240 Volt VDS +0.1 4.50-0.1 +0.1 1.50-0.1 typical at VGS=-3.5V +0.1 2.50-0.1 Low threshold and Fast switching 1 +0.1 4.00-0.1 +0.1 1.80-0.1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 RDS(on)= 8.8 Unit: mm 1. Source Base 1. Collector 2.2. Drain Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS -240 V ID -200 mA Pulsed Drain Current IDM -1 A Gate Source Voltage VGS Power Dissipation at Tamb =25 Ptot 1* Tj:Tstg -55 to +150 Drain-Source Voltage Continuous Drain Current at Tamb=25 Operating and Storage Temperature Range 40 V W * recommended Ptot calculated using FR4 measuring 15X15X0.6mm www.kexin.com.cn 1 Transistors IC SMD Type KVP4424Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons BVDSS ID=-1mA, VGS=0V -240 Gate-Source Threshold Voltage VGS(th) ID=-1mA, VDS= VGS -0.7 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Static Drain-Source RDS(on) On-State Resistance Typ Max Unit V -2.0 V 100 nA VDS=-240V, VGS=0V -10 A VDS=-190V, VGS=0V, T=125 -100 A VGS= -1.4 40V, VDS=0V VDS=-10V, VGS=-10V -0.75 VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA A 7.1 9 8.8 11 gfs Input Capacitance *2 Ciss Common Source Output Capacitance *2 Coss 18 25 pF Reverse Transfer Capacitance*2 Crss 5 15 pF Turn-On Delay Time *2,3 td(on) 8 15 ns tr Turn-Off Delay Time *2,3 td(off) Fall Time *2,3 VDS=-10V,ID=-0.2A -1.0 Forward Transconductance *1,2 Rise Time *2,3 VDS=-25V, VGS=0V, f=1MHz VDD -50V, ID =-0.25A,VGEN=-10V tf 2% *2 Sample test. *3 Switching times measured with 50 source impedance and Spice parameter data is available upon request for this device Marking Marking www.kexin.com.cn 24P 125 mS 100 *1 Measured under pulsed conditions. Width=300 s. Duty cycle 2 Min Drain-Source Breakdown Voltage 5ns rise time on a pulse generator 200 pF 8 15 ns 26 40 ns 20 30 ns