Transistors IC SMD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 (CZT2955) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A). +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector - emitter votage VCER -70 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V IC -6 A Base current IB -3 A Power dissipation PD 2 W Collector current Thermal resistance,Junctiion-to-ambient R 62.5 JA Junction temperature Tj 150 Storage temperature Tstg -65 to +150 /W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to emitter breakdown voltage VCEO IC=-30mA -60 V Collector to emitter breakdown voltage VCER IC=-30mA,RBE=100 -70 V ICEO VCE=-30V ICEV VCE=-100V,VEB=-1.5V 1.0 mA IEBO VEB = -7.0 V -5.0 mA Collctor cutoff current Emitter cutoff current DC current gain hFE IC =- 4.0A; VCE =-4.0 V 20 IC = -6.0A; VCE = -4.0V 5.0 Collector to emitter saturation voltage VCE(sat) IC = -4.0A; IB =- 400mA Base to emitter ON voltage VBE(on) Transition frequency fT -700 VCE=-4.0V,IC=-4.0A IC=- 500mA; VCE =-10V; f = 1.0 MHz 2.5 A 70 -1.1 V -1.5 V MHz www.kexin.com.cn 1