Infrared Emitting Diodes(GaAs) KODENSHI EL6F11 DIMENSIONS (Unit : mm) The EL6F11 is a high-power GaAs IRED mounted in a clear epoxy package. This IRED is both compact and easy to mount. FEATURES •Plastic mold package with a large caliber lens •High output power APPLICATIONS •Optical switches MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation Pulse forward current *1 Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF PD IFP Topr. Tstg. Tsol. 4 50 80 1 －25～＋85 －40～＋85 260 V mA mW A ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity *3 Half angle (Ta=25℃) Symbol Conditions VF IR λp Δλ PO Δθ IF=50mA VR=4V IF=20mA IF=20mA IF=50mA IF=20mA Min. 2.5 *3. Measured by tester of KODENSHI CORP. - 1- Typ. Max. Unit. 1.3 1.65 10 V μ A nm nm V deg. 940 50 6.0 ±25 Infrared Emitting Diodes(GaAs) EL6F11 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-