Infrared Emitting Diodes(GaAs) KODENSHI KEL314 DIMENSIONS (Unit : mm) The KEL314 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package APPLICATIONS •Photointerrupters •Optical switches •Toys MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 5 50 0.5 75 -25~+85 -30~+100 240 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=50mA VR=5V f=1MHz IF=50mA IF=50mA IF=50mA Min. Typ. 25 0.7 940 50 ±30 - 1- Max. Unit. 1.6 10 V μ A pF mW/sr nm nm deg. Edited by Foxit PDF Editor Copyright (c) by Foxit Software Company, 2004 - 2007 For Evaluation Only. Infrared Emitting Diodes(GaAs) KEL314 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-