LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA226B/SEFSBKS-PF DATA SHEET DOC. NO : REV. DATE : QW0905- LA226B/SEFSBKS-PF A : 09 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/6 PART NO. LA226B/SEFSBKS-PF Package Dimensions 5.5 7.24 8.64 5.9 7.24 3.5±0.5 2.54 2.54 5.08 2.54 1 2 3 SBKS SEF 1 2 3 LSEFSBKS3392/S141 5.0 5.9 7.6 8.6 9.8±0.5 SEF SBKS 1.5MAX □0.5 TYP 1 2 3 18.0MIN 2.0MIN 2.0MIN 2.54TYP 1.ANODE ORANGE 2.COMMON CATHODE 3.ANODE BLUE 2.54TYP 1 2 3 Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/6 PART NO. LA226B/SEFSBKS-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SEF SBKS Forward Current IF 50 30 mA Peak Forward Current Duty 1/10@10KHz IFP 90 100 mA Power Dissipation PD 120 120 mW Ir 10 50 μA Electrostatic Discharge( * ) ESD 2000 500 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Reverse Current @5V Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted AlGaInP Luminous Viewing intensity angle @20mA(mcd) 2θ 1/2 (deg) Min.Typ. Max. Min. Typ. Lens Orange LA226B/SEFSBKS-PF Forward Dominant Spectral voltage wave halfwidth length △λ nm @ 20mA(V) λDnm 605 17 1.7 --- 2.6 350 550 70 475 26 --- 3.5 4.2 120 250 70 White Diffused InGaN/SiC Blue Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/6 PART NO. LA226B/SEFSBKS-PF Typical Electro-Optical Characteristics Curve SEF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/6 PART NO. LA226B/SEFSBKS-PF Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA226B/SEFSBKS-PF Page 5/6 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/6 PART NO. LA226B/SEFSBKS-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11