LIGITEK LDD405-65-XX-RP20

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DUAL DIGIT LED DISPLAY (0.40 lnch)
LDD405/65-XX/RP20
DATA SHEET
DOC. NO
:
QW0905-LDD405/65-XX/RP20
REV.
:
A
DATE
: 09 - Feb. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD405/65-XX/RP20
Page 1/7
Package Dimensions
6.9
(0.272")
20.2
(0.795")
DIG.1
DIG.2
10.16
(0.40")
LDD405/65-XX/RP20
LIGITEK
12.6
(0.496")
16.0
(0.630")
ψ1.3(0.051")
A
F
Ø 0.51
TYP.
DIG.2
C
E
20±0.5
B
D
DP
2.45X7=
17.15(0.675")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LDD405/65-XX/RP20
Internal Circuit Diagram
LDD4055-XX/RP20
4
DIG.1
5
DIG.2
A B C D E F G
15 13 1 3 2 14 16
A B C D E F G
10 12 8 6 7 11 9
LDD4065-XX/RP20
4
DIG.1
A B C D E F G
15 13 1 3 2 14 16
5
DIG.2
A B C D E F G
10 12 8 6 7 11 9
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LDD405/65-XX/RP20
Electrical Connection
PIN NO.
LDD4055-XX/RP20
PIN NO.
LDD4065-XX/RP20
1
Anode
C Dig.1
1
Cathode
C Dig.1
2
Anode
E Dig.1
2
Cathode
E Dig.1
3
Anode
D Dig.1
3
Cathode
D Dig.1
4
Common Cathode Dig.1
4
Common Anode Dig.1
5
Common Cathode Dig.2
5
Common Anode Dig.2
6
Anode
D Dig.2
6
Cathode
D Dig.2
7
Anode
E Dig.2
7
Cathode
E Dig.2
8
Anode
C Dig.2
8
Cathode
C Dig.2
9
Anode
G Dig.2
9
Cathode
G Dig.2
10
Anode
A Dig.2
10
Cathode
A Dig.2
11
Anode
F Dig.2
11
Cathode
F Dig.2
12
Anode
B Dig.2
12
Cathode
B Dig.2
13
Anode
B Dig.1
13
Cathode
B Dig.1
14
Anode
F Dig.1
14
Cathode
F Dig.1
15
Anode
A Dig.1
15
Cathode
A Dig.1
16
Anode
G Dig.1
16
Cathode
G Dig.1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD405/65-XX/RP20
Page 4/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SR
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
λP
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LDD4055-XX/RP20
GaAlAs
LDD4065-XX/RP20
Electrical
Red
660
20
1.5
1.8
Common
Anode
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.4
3.05
5.0
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/7
PART NO. LDD405/65-XX/RP20
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/7
PART NO. LDD405/65-XX/RP20
Typical Electro-Optical Characteristics Curve
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD405/65-XX/RP20
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃ &-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11