LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.4 Inch) LDD425/66F-XX DATA SHEET DOC. NO : QW0905- LDD425/66F-XX REV. : A DATE : 12 - Apr. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LDD425/66F-XX Package Dimensions 6.9 (0.272") 20.2 (0.795") DIG.1 10.16 (0.4") DIG.2 12.7 (0.5") 16.0 (0.63") LDD425/66F-XX LIGITEK ψ1.3(0.051") A 6.9 (0.27") F B G E C 5.2± 0.5 0.51 TYP DP D 2.54X4= 10.16(0.40") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LDD425/66F-XX Internal Circuit Diagram LDD4256F-XX 10 5 DIG.2 DIG.1 A B C D E F G DP A B C D E F G DP 7 6 4 1 3 8 9 2 LDD4266F-XX 10 DIG.1 5 DIG.2 A B C D E F G DP A B C D E F G DP 7 6 4 1 3 8 9 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD425/66F-XX Page 3/7 Electrical Connection PIN NO. LDD4256F-XX PIN NO. LDD4266F-XX 1 Anode D 1 Cathode D 2 Anode DP 2 Cathode DP 3 Anode E 3 Cathode E 4 Anode C 4 Cathode C 5 Common Cathode Dig.2 5 Common Anode Dig.2 6 Anode B 6 Cathode B 7 Anode A 7 Cathode A 8 Anode F 8 Cathode F 9 Anode G 9 Cathode G 10 Common Cathode Dig.1 10 Common Anode Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LDD425/66F-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT HRF Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 90 mA Power Dissipation Per Chip PD 75 mW Ir 10 μA Electrostatic Discharge ESD 2000 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λD (nm) △λ Vf(v) (nm) Iv(mcd) Min. Typ. Max. Min. 1.5 1.7 IV-M Typ. Common Cathode LDD4256F-XX AlGaInP LDD4266F-XX Electrical 630 Red 20 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 18 34 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD425/66F-XX Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD425/66F-XX Page6/7 Typical Electro-Optical Characteristics Curve HRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize@25 ℃ 1.2 Forward Voltage@20mA Normalize @25 ℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 100 Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 100 1.0 0.5 0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD425/66F-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11