APTGT100DU120TG Dual common source Fast Trench + Field Stop IGBT® Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 100A @ Tc = 80°C Q2 G1 G2 E1 E2 E NTC2 E2 C1 E Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant C2 C2 E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 140 100 200 ±20 480 Tj = 125°C 200A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 G2 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100DU120TG – Rev 1 NTC1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring APTGT100DU120TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 1.4 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C R G = 3.9Ω Fall Time Tf Min Test Conditions VR=1200V IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =2000A/µs www.microsemi.com Typ 1.7 2.0 5.8 Typ 7200 400 300 260 30 420 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V pF ns 70 290 50 520 ns 90 10 mJ 10 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 9 18 5 9 Max 250 500 Unit V µA A 2.1 V ns µC July, 2006 Symbol Characteristic mJ 2-5 APTGT100DU120TG – Rev 1 Electrical Characteristics APTGT100DU120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.26 0.48 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100DU120TG – Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTGT100DU120TG Typical Performance Curve Output Characteristics (VGE =15V) 200 VGE=17V 150 TJ=125°C IC (A) IC (A) T J = 125°C TJ=25°C 150 Output Characteristics 200 100 VGE =13V VGE =15V 100 VGE=9V 50 50 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 200 175 TJ=125°C 15 E (mJ) IC (A) 125 100 50 TJ=125°C 4 Eon Eoff Er 10 75 3 VCE = 600V VGE = 15V R G = 3.9 Ω TJ = 125°C 20 150 2 VCE (V) Energy losses vs Collector Current 25 TJ=25°C 1 Eon 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 25 Eon 200 160 TJ = 125°C 15 IC (A) E (mJ) 240 VCE = 600V VGE =15V I C = 100A 20 75 100 125 150 175 200 Eoff 10 120 Er 80 5 VGE =15V TJ =125°C R G=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 July, 2006 IGBT 0.25 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT100DU120TG – Rev 1 Thermal Impedance (°C/W) 0.3 APTGT100DU120TG Forward Characteristic of diode 200 VCE=600V D=50% RG =3.9 Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS T J=25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ =125°C 100 20 50 10 Hard switching 0 0 0 20 TJ =125°C 40 60 80 IC (A) 100 120 0 140 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.3 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100DU120TG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)