LIGITEK LSD3C5-65-R1-XX-KP4

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
SINGLE DIGIT LED DISPLAY (0.31 Inch)
LSD3C5/65/R1/XX/KP4
DATA SHEET
DOC. NO
:
QW0905- LSD3C5/65/R1-XX/KP4
REV.
:
A
DATE
: 06 - Jan - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65/R1-XX/KP4
Page 1/7
Package Dimensions
LSD3C5/65/R1-XX/KP4
5.0(0.197")
LIGITEK
7.0(0.276")
□0.5
TYP
PIN NO.1
8.0
(0.31")
11.0
(0.433")
2.0X4=8.0
(0.315")
ψ0.9(0.035")
4.0±0.5
□0.3
TYP
5.3(0.209")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65/R1-XX/KP4
Page 2/7
Internal Circuit Diagram
LSD3C55/R1-XX
9
A B
1 10
C D
E
F
8
4
2
5
G
3
6
DP
7
LSD3C65/R1-XX
9
A B
1 10
C D
E
F
8
4
2
5
G
3
6
DP
7
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65/R1-XX/KP4
Page 3/7
Electrical Connection
LSD3C55/R1-XX
PIN NO.1
PIN NO.1
LSD3C65/R1-XX
1
Anode
A
1
Cathode
A
2
Anode
F
2
Cathode
F
3
Anode
G
3
Cathode
G
4
Anode
E
4
Cathode
E
5
Anode
D
5
Cathode
D
6
Cathode DP
6
Anode
7
Anode
DP
7
Cathode DP
8
Anode
C
8
Cathode
9
Common Cathode
9
Common Anode
10
Anode
B
10
Cathode
DP
C
B
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65/R1-XX/KP4
Page 4/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SR
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
△λ
Vf(v)
(nm)
Iv(mcd)
Min.
Typ. Max. Min.
Typ.
1.5
1.7
2.4
5.0
IV-M
Common
Cathode
LSD3C55/R1-XX/KP4
GaAlAs
LSD3C65/R1-XX/KP4
Electrical
λP
(nm)
660
Red
20
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
3.05
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65R/R1-XX/KP4
Page 5/7
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Emission Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/7
PART NO. LSD3C5/65/R1-XX/KP4
Typical Electro-Optical Characteristics Current
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3C5/65/R1-XX/KP4
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11