APTGT300H60G VCES = 600V IC = 300A @ Tc = 80°C Full - Bridge Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 G3 E3 OUT1 OUT2 Q2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Q4 G2 G4 E2 E4 0/VBUS OUT1 G1 VBUS Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant G2 0/VBUS E1 E2 E3 E4 G3 G4 OUT2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 430 300 500 ±20 1150 Tj = 150°C 600A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A June, 2006 E1 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300H60G – Rev 1 Q1 G1 APTGT300H60G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 300A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=600V IF = 300A VGE = 0V IF = 300A VR = 300V di/dt =3100A/µs Er Min Reverse Recovery Energy www.microsemi.com 1.4 1.5 5.8 Typ 24 1.5 0.75 115 45 200 Max Unit 350 1.8 µA 6.5 500 V nA Max Unit V nF ns 120 50 ns 250 70 1.5 2.7 8.55 10.5 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ 55 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Test Conditions DC Forward Current VF 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 300A R G = 1.8Ω Fall Time Eon Min Typ mJ mJ Max 150 400 300 1.5 1.4 130 225 13.5 28.5 3.5 7.1 Unit V µA A 1.9 V ns µC June, 2006 Symbol Characteristic mJ 2-5 APTGT300H60G – Rev 1 Electrical Characteristics APTGT300H60G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.13 0.21 Unit °C/W V 175 125 100 5 3.5 280 °C N.m g June, 2006 SP6 Package outline (dimensions in mm) www.microsemi.com 3-5 APTGT300H60G – Rev 1 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300H60G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 T J=25°C T J = 150°C T J=125°C 400 VGE =19V 400 TJ =150°C IC (A) IC (A) VGE =13V 500 500 300 VGE=15V 300 VGE=9V 200 200 100 100 TJ=25°C 0 0 0 0.5 1 1.5 VCE (V) 2 0 2.5 20 T J=25°C 500 15 E (mJ) IC (A) 1.5 2 V CE (V) VCE = 300V VGE = 15V RG = 1.8Ω TJ = 150°C 17.5 400 300 1 TJ =125°C 200 12.5 3 3.5 Eoff Er 10 7.5 5 T J=150°C 100 2.5 T J=25°C Eon 0 0 5 6 7 8 9 10 0 11 100 200 Switching Energy Losses vs Gate Resistance 20 400 500 600 Reverse Bias Safe Operating Area 700 VCE = 300V VGE =15V IC = 300A T J = 150°C Eoff 600 500 Eon IC (A) 15 300 IC (A) VGE (V) E (mJ) 2.5 Energy losses vs Collector Current Transfert Characteristics 600 0.5 10 5 400 300 200 Er VGE =15V TJ =150°C RG=1.8Ω 100 Eon 0 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 IGBT 0.1 0.7 0.08 0.5 0.06 June, 2006 0.12 0.3 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT300H60G – Rev 1 Thermal Impedance (°C/W) 0.14 APTGT300H60G Forward Characteristic of diode 600 VCE=300V D=50% RG=1.8Ω TJ =150°C 100 ZCS 80 ZVS 500 400 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 300 T J=125°C 200 40 Hard switching 20 T J=150°C 100 TJ =25°C 0 0 0 100 200 300 400 0 500 0.4 IC (A) 0.8 1.2 V F (V) 1.6 2 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.25 Diode 0.2 0.15 0.9 0.7 0.5 0.1 0.05 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300H60G – Rev 1 June, 2006 Rectangular Pulse Duration in Seconds