APTM120DDA57T3G Dual Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR2 22 7 23 8 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 17 13 68 ±30 684 390 22 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120DDA57T3G– Rev 1 July, 2006 CR1 VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C APTM120DDA57T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM IF Min Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit Max Unit Test Conditions pF nC 15 ns 160 45 990 µJ 685 1565 µJ 857 Min Typ Max 1200 IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =1000A/µs www.microsemi.com mΩ V nA 20 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω VR=1200V µA 120 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω DC Forward Current VF Typ 5155 770 130 187 Max 250 1000 684 5 ±100 24 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 570 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Symbol Characteristic Typ 3 VGS = 10V VBus = 600V ID = 17A Reverse diode ratings and characteristics VRRM Min VGS = 0V,VDS = 1200V Unit V Tj = 25°C Tj = 125°C 250 500 Tc = 80°C Tj = 25°C Tj = 125°C 25 2.1 1.9 Tj = 25°C 95 Tj = 125°C 190 Tj = 25°C 2.3 Tj = 125°C 4.5 µA A V ns µC 2–6 APTM120DDA57T3G– Rev 1 July, 2006 Symbol APTM120DDA57T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.32 1.2 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120DDA57T3G– Rev 1 July, 2006 SP3 Package outline (dimensions in mm) APTM120DDA57T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 50 40 7V 6.5V 30 20 6V 10 5.5V 5 10 15 20 25 60 50 40 30 TJ=25°C 20 10 5V 0 0 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) T J=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance V GS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 20 Normalized to VGS=10V @ 8.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS , Drain to Source Voltage (V) 1.4 T J=-55°C 0 0.9 0.8 16 12 8 4 0 0 10 20 30 40 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM120DDA57T3G– Rev 1 July, 2006 I D, Drain Current (A) V GS=15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=8.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms 1 Single pulse TJ =150°C TC=25°C 0 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 1200 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 I D=17A TJ=25°C 12 V DS=240V 10 VDS=600V 8 V DS =960V 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC) 5–6 APTM120DDA57T3G– Rev 1 July, 2006 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120DDA57T3G APTM120DDA57T3G Delay Times vs Current t d(off) 160 140 VDS=800V RG=5Ω TJ=125°C L=100µH 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG =5Ω T J=125°C L=100µH 100 80 60 40 tr 20 td(on) 40 tf 20 0 0 5 10 15 20 25 30 35 5 10 I D, Drain Current (A) 35 4 V DS=800V RG=5Ω T J=125°C L=100µH 2.5 2 Eon Switching Energy (mJ) Eoff 1.5 1 0.5 0 VDS=800V ID=17A TJ=125°C L=100µH 3 Eoff 2 Eon Eoff 1 0 5 10 15 20 25 30 35 0 I D, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 175 150 ZCS ZVS 125 100 VDS=800V D=50% RG=5Ω T J=125°C T C=75°C 75 50 25 Hard switching 0 4 6 8 10 12 14 ID, Drain Current (A) 16 100 T J=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120DDA57T3G– Rev 1 July, 2006 Switching Energy (mJ) 30 Switching Energy vs Gate Resistance Switching Energy vs Current 3 Frequency (kHz) 15 20 25 I D, Drain Current (A)